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Study of CVD nanowire high-k metal interface quality for interconnect level MOS devicesMOREL, P. H; LEROUX, C; ERNST, T et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1228-1231, issn 0167-9317, 4 p.Conference Paper

Islets of Langerhans autotransplantation in humansMOREL, P. H; BUHLER, L; DENG, S et al.Transplantation proceedings. 1994, Vol 26, Num 6, pp 3527-3528, issn 0041-1345Conference Paper

Postglacial left slip rate and past occurrence of M ≥ 8 earthquakes on the western Haiyuan fault, Gansu, ChinaLASSERRE, C; MOREL, P.-H; LU TAIYA et al.Journal of geophysical research. 1999, Vol 104, Num B8, pp 17633-17651, issn 0148-0227Article

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